 |
Em_EEPROM Middleware Library 2.20
|
|
Em_EEPROM Middleware Library 2.20
|
The Em_EEPROM context data structure.
It is used to store specific Em_EEPROM context data. Do not modify the context structure since it may cause unexpected behavior of the Cy_Em_EEPROM functions that rely on this context structure.
Data Fields | |
| uint32_t | numberOfRows |
| The number of flash rows allocated for the Em_EEPROM excluding the number of rows allocated for wear-leveling and a redundant copy overhead. | |
| uint32_t | eepromSize |
| The number of bytes to store in Em_EEPROM. More... | |
| uint32_t | wearLevelingFactor |
| The amount of wear leveling from 1 to 10. More... | |
| uint32_t | userFlashStartAddr |
| The start address for the Em_EEPROM memory in flash. More... | |
| uint32_t | byteInRow |
| The number of user's data bytes in one row. More... | |
| uint32_t | simpleMode |
| No headers configured. | |
| uint32_t * | ptrLastWrittenRow |
| The pointer to the last written row. More... | |
| uint8_t | redundantCopy |
| If not zero, a redundant copy of the Em_EEPROM is included. More... | |
| uint8_t | blockingWrite |
| If not zero, a blocking write to flash is used. More... | |
| uint32_t cy_stc_eeprom_context_t::eepromSize |
The number of bytes to store in Em_EEPROM.
| uint32_t cy_stc_eeprom_context_t::wearLevelingFactor |
The amount of wear leveling from 1 to 10.
1 means no wear leveling is used.
| uint32_t cy_stc_eeprom_context_t::userFlashStartAddr |
The start address for the Em_EEPROM memory in flash.
| uint32_t cy_stc_eeprom_context_t::byteInRow |
The number of user's data bytes in one row.
| uint32_t* cy_stc_eeprom_context_t::ptrLastWrittenRow |
The pointer to the last written row.
| uint8_t cy_stc_eeprom_context_t::redundantCopy |
If not zero, a redundant copy of the Em_EEPROM is included.
| uint8_t cy_stc_eeprom_context_t::blockingWrite |
If not zero, a blocking write to flash is used.
Otherwise, a non-blocking write is used. This parameter is used only for PSoC 6.